SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

83-88

Citation:

A. A. Burk et al., "SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor", Materials Science Forum, Vols. 264-268, pp. 83-88, 1998

Online since:

February 1998

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