Volumes

Materials Science Forum
Vols. 284-286

Materials Science Forum
Vols. 282-283

Materials Science Forum
Vols. 278-281

Materials Science Forum
Vols. 276-277

Materials Science Forum
Vols. 273-275

Materials Science Forum
Vols. 269-272

Materials Science Forum
Vols. 264-268

Materials Science Forum
Vols. 258-263

Materials Science Forum
Vols. 255-257

Materials Science Forum
Vols. 251-254

Materials Science Forum
Vol. 250

Materials Science Forum
Vols. 248-249

Materials Science Forum
Vol. 247

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

Export:

ToC:

Table of Contents

<
1
2
3
4
5
…
>
>>

Paper Title Page

Sublimation Growth of Bulk β-SiC Crystals on (100) and (111) β-SiC Substrates

Authors: H.N. Jayatirtha, Michael G. Spencer

77

SiC Epitaxial Layer Growth in a Novel Multi-Wafer VPE Reactor

Authors: Albert A. Burk, Michael J. O'Loughlin, S.S. Mani

83

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Authors: Roland Rupp, A. Wiedenhofer, Peter Friedrichs, Dethard Peters, Reinhold Schörner, Dietrich Stephani

89

Growth and Characterisation of SiC Power Device Material

Authors: Olof Kordina, Anne Henry, Erik Janzén

97

Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD

Authors: Alexsandre Ellison, Tsunenobu Kimoto, Ivan G. Ivanov, Qamar-ul Wahab, Anne Henry, Olof Kordina, Jian Hui Zhang, Carl G. Hemmingsson, Chun-Yuan Gu, M.R. Leys, Erik Janzén

103

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Authors: Olof Kordina, Kenneth G. Irvine, Joseph J. Sumakeris, H.S. Kong, Michael J. Paisley, Calvin H. Carter Jr.

107

Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence

Authors: T. Yamamoto, Tsunenobu Kimoto, Hiroyuki Matsunami

111

Nitrogen Doping Efficiency During Vapor Phase Epitaxy of 4H-SiC

Authors: L.B. Rowland, Albert A. Burk, C.D. Brandt

115

Boron Compensation of 6H Silicon Carbide

Authors: Michael S. Mazzola, Stephen E. Saddow, Adolf Schöner

119

CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane

Authors: Christer Hallin, Alexsandre Ellison, Ivan G. Ivanov, Anne Henry, Nguyen Tien Son, Erik Janzén

123

<
1
2
3
4
5
…
>
>>