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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE

Authors: B. Beaumont, F. Calle, S. Haffouz, Eva Monroy, Mathieu Leroux, Enrique Calleja, P. Lorenzini, Elias Muñoz Merino, Pierre Gibart

1425

Electroluminescence of GaN pn Diodes

Authors: Takao Nagatomo, H. Saitou

1429

Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells

Authors: L. Calcagnile, G. Coli, D. Rinaldi, R. Cingolani, H. Tang, A.E. Botchkarev, W. Kim, A. Salvador, Hadis Morkoç

1433

An Investigation of Breakdown Mechanisms in Al(GaN) MSM Photodetectors

Authors: Ian T. Ferguson, S. Liang, C.A. Tran, R.F. Karlicek, Zhe Chuan Feng, Y. Lu, C. Joseph

1437

High Speed, Low Noise Ultraviolet Photodetectors Based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n) Structures

Authors: G. Xu, A. Salvador, A.E. Botchkarev, W. Kim, C. Lu, H. Tang, Hadis Morkoç, G. Smith, M. Estes, T. Dang, P. Wolf

1441

Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

Authors: Remis Gaska, Michael S. Shur, J.W. Yang, A. Osinsky, A.O. Orlov, G.L. Snider

1445

Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures

Authors: W. Walukiewicz, L. Hsu, Eugene E. Haller

1449

Annealed Si_1-xC_x Emitter Silicon Heterojunction Bipolar Transistors

Authors: R. Alcubilla, D. Bardés, A. Orpella, J. Calderer, L.F. Marsal, J. Pallarès, X. Correiga

1455

Ultraviolet Excitonic Laser Action at Room Temperature in ZnO Nanocrystalline Epitaxial Films

Authors: Megumi Kawasaki, A. Ohtomo, H. Koinuma, Yoji Sakurai, Yoichi Yoshida, Z.K. Tang, P. Yu, G.K.L. Wang, Y. Segawa

1459

Double Heterostructure Based on ZnO and Mg_xZn_1-xO

Authors: A. Ohtomo, Megumi Kawasaki, T. Koida, H. Koinuma, Yoji Sakurai, Yoichi Yoshida, M. Sumiya, Shunro Fuke, Tadashi Yasuda, Y. Segawa

1463