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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD

Authors: Béla Pécz, M.A. di Forte-Poisson, L. Tóth, György Z. Radnóczi

1255

Excitonic Fine Structure and High Density Effects in GaN

Authors: Andreas Hoffmann, L. Eckey

1259

Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations

Authors: Bogim Gil, O. Briot, R.L. Aulombard, Shun-ichi Nakamura

1265

Free Exciton Recombination in Tensile Strained GaN Grown on GaAs

Authors: R. Goldhahn, S. Shokhovets, Henry Romanus, T.S. Cheng, C.T. Foxon

1271

Exciton Dynamics in Homoepitaxial GaN

Authors: Bo Monemar, Peder Bergman, Ivan G. Ivanov, Jacek M. Baranowski, K. Pakula, I. Grzegory, Katsushige Tsuno

1275

Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al₂O₃

Authors: J. Allègre, P. Lefebvre, Jean Camassel, B. Beaumont, Pierre Gibart

1279

Excitonic Quantum Efficiency of GaN

Authors: A. Göldner, L. Eckey, Andreas Hoffmann, Bogim Gil, O. Briot

1283

Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells

Authors: A. Hangleiter, S. Heppel, J. Off, A. Sohmer, F. Scholz

1287

Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

Authors: J. Holst, M. Straßburg, N.N. Ledentsov, L. Eckey, A. Göldner, Andreas Hoffmann, T. Hempel, D. Rudloff, F. Bertram, J. Christen, A.V. Sakharov, M.V. Maximov, A.S. Usikov, W.V. Lundin, B.V. Pushnyi, Z.I. Alferov

1291

Optical Properties of InGaN/GaN Multiple Quantum Wells

Authors: J. Allègre, P. Lefebvre, Sandrine Juillaguet, Jean Camassel, W. Knap, Q. Chen, M. Asif Khan

1295