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Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations
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Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
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Exciton Dynamics in Homoepitaxial GaN
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Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al₂O₃
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Excitonic Quantum Efficiency of GaN
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Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells
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Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
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Optical Properties of InGaN/GaN Multiple Quantum Wells
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Time-Resolved Spectroscopy on GaN/AlGaN Double Heterostructures and Quantum Wells
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Excitonic Quantum Efficiency of GaN

Excitonic Quantum Efficiency of GaN

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Abstract:

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1283-1286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1283

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Online since:

February 1998

Authors:

A. Göldner, L. Eckey, Andreas Hoffmann, Bogim Gil, O. Briot

Keywords:

Excitons, Nonradiative Recombination Centres, Quantum Efficiency

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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