Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1265-1270

Citation:

B. Gil et al., "Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations", Materials Science Forum, Vols. 264-268, pp. 1265-1270, 1998

Online since:

February 1998

Export:

Price:

$38.00