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Paper Titles
The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates
p.1247
Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
p.1251
Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD
p.1255
Excitonic Fine Structure and High Density Effects in GaN
p.1259
Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations
p.1265
Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
p.1271
Exciton Dynamics in Homoepitaxial GaN
p.1275
Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3
p.1279
Excitonic Quantum Efficiency of GaN
p.1283

Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations

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Abstract:

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1265-1270

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1265

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Online since:

February 1998

Authors:

Bogim Gil, O. Briot, R.L. Aulombard, Shun-ichi Nakamura

Keywords:

Deformation Potentials, Excitons, Strain

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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