Paper Titles

Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD
p.1255

Excitonic Fine Structure and High Density Effects in GaN
p.1259

Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations
p.1265

Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
p.1271

Exciton Dynamics in Homoepitaxial GaN
p.1275

Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al₂O₃
p.1279

Excitonic Quantum Efficiency of GaN
p.1283

Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells
p.1287

Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
p.1291

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Exciton Dynamics in Homoepitaxial GaN

Exciton Dynamics in Homoepitaxial GaN

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1275-1278

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1275

Citation:

Cite this paper

Online since:

February 1998

Authors:

Bo Monemar, Peder Bergman, Ivan G. Ivanov, Jacek M. Baranowski, K. Pakula, I. Grzegory, Katsushige Tsuno

Keywords:

Bound Exciton, Capture, Defect, Free Excitons, Homoepitaxy, Radiative Lifetime, Transfer

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: