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Paper Titles
Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition
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AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC
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The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates
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Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
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Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD
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Excitonic Fine Structure and High Density Effects in GaN
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Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations
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Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
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Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1255-1258

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1255

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Online since:

February 1998

Authors:

Béla Pécz, M.A. di Forte-Poisson, L. Tóth, György Z. Radnóczi

Keywords:

Domain, Gallium Nitride (GaN), MOCVD, Sapphire, TEM

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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