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Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
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Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition
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AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC
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The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates
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Surface Defects in GaN and Al_xGa_1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268AlN Deposition by OMVPE and PLD Used as an...

AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1243-1246

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1243

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Online since:

February 1998

Authors:

Kenneth A. Jones, K. Xie, D.W. Eckart, M.C. Wood, V. Talyansky, R.D. Vispute, T. Venkatesan, K. Wongchotigul, Michael G. Spencer

Keywords:

AES, Annealing, Encapsulate, OMVPE, PLD, X-Ray Diffraction (XRD)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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