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Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films
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Magnetron Sputter Epitaxy of Gallium Nitride on (0001) Sapphire
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Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
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Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition
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AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC
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The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates
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Surface Defects in GaN and Al_xGa_1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Structural and Optical Properties of GaN Layers...

Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1235-1238

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1235

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Online since:

February 1998

Authors:

B. Yang, O. Brandt, Y.G. Zhang, A.Z. Li, B. Jenichen, G. Paris, K. Ploog

Keywords:

Direct Epitaxy of GaN/SiC, MBE, Photoluminescence (PL), Reflectance

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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