Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1235-1238

DOI:

10.4028/www.scientific.net/MSF.264-268.1235

Citation:

B. Yang et al., "Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy", Materials Science Forum, Vols. 264-268, pp. 1235-1238, 1998

Online since:

February 1998

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