MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1221-1224

DOI:

10.4028/www.scientific.net/MSF.264-268.1221

Citation:

A. Yoshikawa et al., "MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures", Materials Science Forum, Vols. 264-268, pp. 1221-1224, 1998

Online since:

February 1998

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