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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268MBE Growth of Device-Quality Cubic GaN on...

MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1221-1224

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1221

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Online since:

February 1998

Authors:

Akira Yoshikawa, Zuo Xiang Qin, H. Nagano, Y. Sugure, A.W. Jia, M. Kobayashi, Y. Kato, Kazuhiko Takahashi

Keywords:

Atomic Force Microscope (AFM), Atomic Hydrogen, Cubic GaN, GaAs Substrate, High Resolution X-Ray Diffraction (HR-XRD), MBE, Reciprocal Space Mapping (RSM), RHEED

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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