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Magnetron Sputter Epitaxy of Gallium Nitride on (0001) Sapphire
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Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy
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Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition
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AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC
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The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates
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Surface Defects in GaN and Al_xGa_1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Transmission Electron Microscopy Study of GaN on...

Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1239-1242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1239

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Online since:

February 1998

Authors:

W.L. Zhou, P. Pirouz, F. Namavar, P.C. Colter, Murugesu Yoganathan, M.W. Leksono, J.I. Pankove

Keywords:

Chemical Vapor Deposition (CVD), Defect, Gallium Nitride (GaN), Silicon Carbide (SiC), SIMOX, TEM

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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