Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1239-1242

DOI:

10.4028/www.scientific.net/MSF.264-268.1239

Citation:

W.L. Zhou et al., "Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition", Materials Science Forum, Vols. 264-268, pp. 1239-1242, 1998

Online since:

February 1998

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$35.00

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