Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1251-1254

DOI:

10.4028/www.scientific.net/MSF.264-268.1251

Citation:

M. C. Shin et al., "Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy", Materials Science Forum, Vols. 264-268, pp. 1251-1254, 1998

Online since:

February 1998

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