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Paper Titles
Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
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Structural Characterisation of GaN Layers on Sapphire Grown by MOCVD
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Excitonic Fine Structure and High Density Effects in GaN
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Optical Transitions and Exciton Binding Energies in GaN Grown along Various Crystallographic Orientations
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Free Exciton Recombination in Tensile Strained GaN Grown on GaAs
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Exciton Dynamics in Homoepitaxial GaN
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Exciton Dynamics of Thick GaN Epilayers Deposited by MOVPE on Al2O3
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Excitonic Quantum Efficiency of GaN
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Optical Absorption and Excitation Spectroscopy on GaInN/GaN Double Heterostructures and Quantum Wells
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Free Exciton Recombination in Tensile Strained GaN Grown on GaAs

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1271-1274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1271

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Online since:

February 1998

Authors:

R. Goldhahn, S. Shokhovets, Henry Romanus, T.S. Cheng, C.T. Foxon

Keywords:

Free Excitons, GaAs Substrate, Interface Layer, Photoluminescence (PL), Tensile Strain

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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