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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Magnesium-Doped GaN Films Grown by Molecular Beam...

Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1217-1220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1217

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Online since:

February 1998

Authors:

T.S. Cheng, C.T. Foxon, N.J. Jeffs, D.J. Dewsnip, L.B. Flannery, J.W. Orton, I. Harrison, S.V. Novikov, B.Ya. Ber, Yu.A. Kudriavtsev

Keywords:

Gallium Nitride (GaN), Magnesium Doping, Molecular Beam Epitaxy (MBE)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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