Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1217-1220

DOI:

10.4028/www.scientific.net/MSF.264-268.1217

Citation:

T.S. Cheng et al., "Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates", Materials Science Forum, Vols. 264-268, pp. 1217-1220, 1998

Online since:

February 1998

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