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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth and Characterization of High Quality...

Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1201-1204

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1201

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Online since:

February 1998

Authors:

F. Hamdani, M. Yeadon, David John Smith, H. Tang, W. Kim, A. Salvador, A.E. Botchkarev, J. Murray Gibson, Hadis Morkoç

Keywords:

Atomic Force Microscope (AFM), Photoluminescence (PL), Reflectivity, Surface Polarity, TEM, Zinc Oxide (ZnO)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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