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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Influence of Activated Nitrogen on Plasma Assisted...

Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1193-1196

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1193

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Online since:

February 1998

Authors:

U. Birkle, C. Thomas, M. Fehrer, S. Einfeldt, H. Heinke, D. Hommel

Keywords:

Defect, ECR, Gallium Nitride (GaN), Langmuir, MBE, Morpholoy, Nitrogen Species, Photoluminescence (PL), Plasma, RF

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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