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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Growth of AIN on 6H- and 4H-SiC by Gas-Source...

Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1181-1184

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1181

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Online since:

February 1998

Authors:

K. Järrendahl, S.A. Smith, T.S. Zheleva, R.S. Kern, Robert F. Davis

Keywords:

Ammonia, Gas Source Molecular Beam Epitaxy, Surface Reconstruction, Thin Film

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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