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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268An Accurate Method to Determine the Growth...

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1173-1176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1173

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Online since:

February 1998

Authors:

B. Schöttker, J. Kühler, Donat J. As, D. Schikora, K. Lischka

Keywords:

Gallium Nitride (GaN), MBE, RHEED

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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