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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268MOCVD Growth and Properties of InGaN/GaN...

MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1157-1160

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1157

Citation:

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Online since:

February 1998

Authors:

S. Keller, F. Cabané, M.S. Minsky, Xing Hui Wu, M.P. Mack, James S. Speck, E. Hu, L.A. Coldren, Umesh K. Mishra, Steven P. DenBaars

Keywords:

Doping, Gallium Nitride (GaN), InGaN, Multi-Quantum Wells, Photoluminescence (PL)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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