Paper Titles

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Optical Properties of GaN Films Grown on SiC/Si
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Modeling of the Incorporation of Aluminium in Ga_1-xAl_xM (M=As or N) Alloys Grown by MOCVD
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MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
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MBE Growth of III-V Nitride Thin Films and Quantum Well Structures
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Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers
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An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
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Elaboration of III-V Nitrides Quantum Dots in Molecular Beam Epitaxy
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Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268MBE Growth of III-V Nitride Thin Films and Quantum...

MBE Growth of III-V Nitride Thin Films and Quantum Well Structures

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1161-1166

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1161

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Online since:

February 1998

Authors:

M.A.L. Johnson, N. El-Masry, J.W. Cook Jr., J.F. Schetzina

Keywords:

Doping, Electroluminescence, Heterostructures, MBE, Photoluminescence (PL)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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