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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Epitaxial Growth of GaN on Silicon Substrates by...

Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1145-1148

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1145

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Online since:

February 1998

Authors:

A. Strittmatter, A. Krost, K. Schatke, Y. Iseri, J. Bläsing, J. Christen

Keywords:

Atomic Force Microscope (AFM), Buffer Layer, Low-Pressure MOCVD, Nitridation, X-Ray Diffraction (XRD)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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