Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1145-1148

DOI:

10.4028/www.scientific.net/MSF.264-268.1145

Citation:

A. Strittmatter et al., "Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers", Materials Science Forum, Vols. 264-268, pp. 1145-1148, 1998

Online since:

February 1998

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