Paper Titles

Growth of Aluminium Nitride with Superior Optical and Morphological Properties
p.1137

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE
p.1141

Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers
p.1145

Optical Properties of GaN Films Grown on SiC/Si
p.1149

Modeling of the Incorporation of Aluminium in Ga_1-xAl_xM (M=As or N) Alloys Grown by MOCVD
p.1153

MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells
p.1157

MBE Growth of III-V Nitride Thin Films and Quantum Well Structures
p.1161

Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers
p.1167

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
p.1173

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Modeling of the Incorporation of Aluminium in...

Modeling of the Incorporation of Aluminium in Ga_1-xAl_xM (M=As or N) Alloys Grown by MOCVD

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1153-1156

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1153

Citation:

Cite this paper

Online since:

February 1998

Authors:

S. Ruffenach-Clur, O. Briot, Bogim Gil, R.L. Aulombard

Keywords:

Alloy, Aluminium Incorporation, Modeling, MOVPE

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: