Paper Titles

Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy
p.1181

Molecular Beam Epitaxy Growth and Characterisation of GaAs_1-xN_xLayers
p.1185

Effect of Elastic Strain on Growth of Ternary Group-III Nitride Compounds
p.1189

Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN
p.1193

Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study
p.1197

Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy
p.1201

Low Temperature Growth of Gallium Nitride on Quartz and Sapphire Substrates
p.1205

STM Observation of Initial Nitridation Process of Ga on Si Substrates
p.1209

Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers
p.1213

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Surface Reconstruction and MBE Growth of Cubic GaN...

Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1197-1200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1197

Citation:

Cite this paper

Online since:

February 1998

Authors:

J.L.F. da Silva, R. Enderlein, L.M.R. Scolfaro, J.R. Leite, A. Tabata, K. Lischka, D. Schikora, Friedhelm Bechstedt

Keywords:

Gallium Nitride (GaN), i, MBE Growth, Reconstruction

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: