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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268STM Observation of Initial Nitridation Process of...

STM Observation of Initial Nitridation Process of Ga on Si Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1209-1212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1209

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Online since:

February 1998

Authors:

Y. Nakada, Hajime Okumura

Keywords:

Gallium Nitride (GaN), Initial Process, Nitridation, Si Substrate, STM

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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