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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Nitridation of GaAs(100) Wafers for the...

Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1213-1216

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1213

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Online since:

February 1998

Authors:

Atsushi Yamamoto, T. Shin-ya, Y. Yamauchi, A. Hashimoto

Keywords:

GaAs(100) Wafer, Gallium Nitride (GaN), NH₃, Nitridation, Zinc Blende Structure

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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