Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1213-1216

DOI:

10.4028/www.scientific.net/MSF.264-268.1213

Citation:

A. Yamamoto et al., "Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers", Materials Science Forum, Vols. 264-268, pp. 1213-1216, 1998

Online since:

February 1998

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