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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Formation of GaN Nano-Column Structure by Nitridation

Authors: A. Hashimoto, T. Motiduki, H. Wada, Atsushi Yamamoto

1129

Growth of High Quality AIN Epitaxial Films by Hot-Wall Chemical Vapour Deposition

Authors: Urban Forsberg, Jens Birch, Mike F. MacMillan, P.O.Å. Persson, L. Hultman, Erik Janzén

1133

Growth of Aluminium Nitride with Superior Optical and Morphological Properties

Authors: K. Wongchotigul, S. Wilson, C. Dickens, X. Tang, Michael G. Spencer

1137

Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE

Authors: Kazuyoshi Tomita, Kenji Itoh, Tetsu Kachi, Hiroshi Tadano

1141

Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers

Authors: A. Strittmatter, A. Krost, K. Schatke, Y. Iseri, J. Bläsing, J. Christen

1145

Optical Properties of GaN Films Grown on SiC/Si

Authors: J. Devrajan, A.J. Steckl, C.A. Tran, R.A. Stall

1149

Modeling of the Incorporation of Aluminium in Ga_1-xAl_xM (M=As or N) Alloys Grown by MOCVD

Authors: S. Ruffenach-Clur, O. Briot, Bogim Gil, R.L. Aulombard

1153

MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells

Authors: S. Keller, F. Cabané, M.S. Minsky, Xing Hui Wu, M.P. Mack, James S. Speck, E. Hu, L.A. Coldren, Umesh K. Mishra, Steven P. DenBaars

1157

MBE Growth of III-V Nitride Thin Films and Quantum Well Structures

Authors: M.A.L. Johnson, N. El-Masry, J.W. Cook Jr., J.F. Schetzina

1161

Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers

Authors: Hajime Okumura, H. Hamaguchi, Kazushi Ohta, G. Feuillet, Krishnan Balakrishnan, Yuuki Ishida, Shigefusa F. Chichibu, Hachiro Nakanishi, Takao Nagatomo, Sadafumi Yoshida

1167