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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Paper Title Page

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes

Authors: S. Ortolland, Marie Laure Locatelli, Dominique Planson, Jean-Pierre Chante, A. Senes

1045

Beryllium-Implanted 6H-SiC P⁺N Junctions

Authors: Nudjarin Ramungul, Yan Jun Zheng, R. Patel, V. Khemka, T. Paul Chow

1049

Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On

Authors: O. Tornblad, Augustinas Galeckas, Jan Linnros, Bo Breitholtz, Ulf Lindefelt

1053

SiC Merged p-n/Schottky Rectifiers for High Voltage Applications

Authors: R. Held, N. Kaminski, E. Niemann

1057

Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

Authors: Fanny Dahlquist, Carl Mikael Zetterling, Mikael Östling, K. Rottner

1061

Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform

Authors: Nudjarin Ramungul, V. Khemka, T. Paul Chow, Mario Ghezzo, James W. Kretchmer

1065

4H-SiC Gate Turn-Off (GTO) Thyristor Development

Authors: Jeff B. Casady, Anant K. Agarwal, L.B. Rowland, R.R. Siergiej, S. Seshadri, S. Mani, J. Barrows, D. Piccone, P.A. Sanger, C.D. Brandt

1069

Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs

Authors: N. Kaminski, S.T. Sheppard, E. Niemann

1073

High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC

Authors: S.T. Sheppard, V. Lauer, W. Wondrak, E. Niemann

1077

SiC Surface Engineering for High Voltage JFET Applications

Authors: Pavel A. Ivanov, O.I. Kon'kov, Andrey O. Konstantinov, V.N. Panteleev, Tat'yana P. Samsonova, Nils Nordell, S. Karlsson, Chris I. Harris

1081