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SiC Merged p-n/Schottky Rectifiers for High Voltage Applications
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Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
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Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
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4H-SiC Gate Turn-Off (GTO) Thyristor Development
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Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs
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High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
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SiC Surface Engineering for High Voltage JFET Applications
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-2684H-SiC Gate Turn-Off (GTO) Thyristor Development

4H-SiC Gate Turn-Off (GTO) Thyristor Development

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1069-1072

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1069

Citation:

Cite this paper

Online since:

February 1998

Authors:

Jeff B. Casady, Anant K. Agarwal, L.B. Rowland, R.R. Siergiej, S. Seshadri, S. Mani, J. Barrows, D. Piccone, P.A. Sanger, C.D. Brandt

Keywords:

GTO's, High-Temperature, Power Electronics, Power Switching, Rectifier, Thyristor

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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