4H-SiC Gate Turn-Off (GTO) Thyristor Development

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1069-1072

DOI:

10.4028/www.scientific.net/MSF.264-268.1069

Citation:

J. B. Casady et al., "4H-SiC Gate Turn-Off (GTO) Thyristor Development", Materials Science Forum, Vols. 264-268, pp. 1069-1072, 1998

Online since:

February 1998

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$35.00

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