Paper Titles

Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
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4H-SiC Gate Turn-Off (GTO) Thyristor Development
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Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs
p.1073

High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
p.1077

SiC Surface Engineering for High Voltage JFET Applications
p.1081

Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor
p.1085

Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material
p.1089

SiC-Based Schottky Diode Gas Sensors
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Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268SiC Surface Engineering for High Voltage JFET...

SiC Surface Engineering for High Voltage JFET Applications

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1081-1084

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1081

Citation:

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Online since:

February 1998

Authors:

Pavel A. Ivanov, O.I. Kon'kov, Andrey O. Konstantinov, V.N. Panteleev, Tat'yana P. Samsonova, Nils Nordell, S. Karlsson, Chris I. Harris

Keywords:

Buried-Gate JFET, Plasma Passivation, Surface Charge Instability

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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