Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1089-1092

DOI:

10.4028/www.scientific.net/MSF.264-268.1089

Citation:

P. Tobias et al., "Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material", Materials Science Forum, Vols. 264-268, pp. 1089-1092, 1998

Online since:

February 1998

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$35.00

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