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SiC Surface Engineering for High Voltage JFET Applications
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Electrical Characteristics of a Novel Gate Structure 4H-SiC Power Static Induction Transistor
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Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material
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SiC-Based Schottky Diode Gas Sensors
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Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Studies of the Ambient Dependent Inversion of...

Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1089-1092

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1089

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Online since:

February 1998

Authors:

Peter Tobias, A. Baranzahi, Ingemar Lundström, Adolf Schöner, K. Rottner, S. Karlsson, P. Mårtensson, Anita Lloyd Spetz

Keywords:

Electric Admittance, Gas Sensor, High-Temperature, Minority Carriers, MIS-Devices

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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