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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Punch-Through Behaviour of Wide Bandgap Materials...

Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1073-1076

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1073

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Online since:

February 1998

Authors:

N. Kaminski, S.T. Sheppard, E. Niemann

Keywords:

Junction Field Effect Transistor (JFET), Miller Capacitance, Punch-Through, Reach-Through, Thermionic Emission

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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