Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1073-1076

DOI:

10.4028/www.scientific.net/MSF.264-268.1073

Citation:

N. Kaminski et al., "Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs", Materials Science Forum, Vols. 264-268, pp. 1073-1076, 1998

Online since:

February 1998

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