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Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On
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SiC Merged p-n/Schottky Rectifiers for High Voltage Applications
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Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
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Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
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4H-SiC Gate Turn-Off (GTO) Thyristor Development
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Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs
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High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Junction Barrier Schottky Diodes in 4H-SiC and...

Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

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Abstract:

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1061-1064

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1061

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Online since:

February 1998

Authors:

Fanny Dahlquist, Carl Mikael Zetterling, Mikael Östling, K. Rottner

Keywords:

Junction Barrier Schottky (JBS) Diode, Power Rectifier

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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