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Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
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Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
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4H-SiC Gate Turn-Off (GTO) Thyristor Development
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Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Carrier Lifetime Extraction from a 6H-SiC High...

Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1065-1068

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1065

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Online since:

February 1998

Authors:

Nudjarin Ramungul, V. Khemka, T. Paul Chow, Mario Ghezzo, James W. Kretchmer

Keywords:

Ambipolar Lifetime, Auger Recombination, Carrier Lifetime, High-Level Injection, Reverse Recovery, Space Charge Limited Current

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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