Paper Titles

Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes
p.1041

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes
p.1045

Beryllium-Implanted 6H-SiC P⁺N Junctions
p.1049

Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On
p.1053

SiC Merged p-n/Schottky Rectifiers for High Voltage Applications
p.1057

Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
p.1061

Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform
p.1065

4H-SiC Gate Turn-Off (GTO) Thyristor Development
p.1069

Punch-Through Behaviour of Wide Bandgap Materials (with Example in 6H-SiC) and its Benefit to JFETs
p.1073

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268SiC Merged p-n/Schottky Rectifiers for High...

SiC Merged p-n/Schottky Rectifiers for High Voltage Applications

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1057-1060

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1057

Citation:

Cite this paper

Online since:

February 1998

Authors:

R. Held, N. Kaminski, E. Niemann

Keywords:

High-Voltage Rectifier, JBS Rectifier, MPS-Rectifier, Schottky Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: