Paper Titles

Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices
p.1025

6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results
p.1029

Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels
p.1033

Nanosecond Risetime Pulse Characterization of SiC p⁺n Junction Diode Breakdown and Switching Properties
p.1037

Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes
p.1041

Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes
p.1045

Beryllium-Implanted 6H-SiC P⁺N Junctions
p.1049

Investigation of Excess Carrier Distributions in 4H-SiC Power Diodes under Static Conditions and Turn-On
p.1053

SiC Merged p-n/Schottky Rectifiers for High Voltage Applications
p.1057

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Reverse Recovery and Avalanche Injection in High...

Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1041-1044

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1041

Citation:

Cite this paper

Online since:

February 1998

Authors:

Martin Domeij, Bo Breitholtz, Jan Linnros, Mikael Östling

Keywords:

Avalanche Injection, Impact Ionization, Reverse Recovery, Turn-Off Failure

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: