Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1025-1028

Citation:

A. O. Konstantinov et al., "Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices", Materials Science Forum, Vols. 264-268, pp. 1025-1028, 1998

Online since:

February 1998

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$38.00

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