Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1033-1036

DOI:

10.4028/www.scientific.net/MSF.264-268.1033

Citation:

R.P. Joshi and C. Fazi, "Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels", Materials Science Forum, Vols. 264-268, pp. 1033-1036, 1998

Online since:

February 1998

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