Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays
p.1017
p.1017
Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation
p.1021
p.1021
Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices
p.1025
p.1025
6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results
p.1029
p.1029
Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels
p.1033
p.1033
Nanosecond Risetime Pulse Characterization of SiC p+n Junction Diode Breakdown and Switching Properties
p.1037
p.1037
Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes
p.1041
p.1041
Comparison between Aluminium and Boron-Doped Junction Termination Extensions for High Voltage 6H-SiC Planar Bipolar Diodes
p.1045
p.1045
Beryllium-Implanted 6H-SiC P+N Junctions
p.1049
p.1049
Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
1033-1036
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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