Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1017-1020

DOI:

10.4028/www.scientific.net/MSF.264-268.1017

Citation:

M. Yoshikawa et al., "Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays", Materials Science Forum, Vols. 264-268, pp. 1017-1020, 1998

Online since:

February 1998

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