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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Generation Mechanisms of Trapped Charges in Oxide...

Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1017-1020

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1017

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Online since:

February 1998

Authors:

Masahito Yoshikawa, K. Saitoh, Takeshi Ohshima, Hisayoshi Itoh, Isamu Nashiyama, Yasutaka Takahashi, K. Ohnishi, Hajime Okumura, Sadafumi Yoshida

Keywords:

Bias Polarity, Depth Profile, Irradiation, MOS Structure, Oxide-Trapped Charges, γ-Ray

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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