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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Interface States and Field-Effect Mobility in...

Interface States and Field-Effect Mobility in 6H-SiC MOS Transistors

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1013-1016

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1013

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Online since:

February 1998

Authors:

Emil Arnold, Nudjarin Ramungul, T. Paul Chow, Mario Ghezzo

Keywords:

Bandtails, Field-Effect, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Mobility

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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