Inversion Layer Mobility in SiC MOSFETs

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

997-1000

Citation:

S. Sridevan and B.J. Baliga, "Inversion Layer Mobility in SiC MOSFETs", Materials Science Forum, Vols. 264-268, pp. 997-1000, 1998

Online since:

February 1998

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Price:

$38.00

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