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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Charge Pumping Measurements on SiC MOSFETs

Charge Pumping Measurements on SiC MOSFETs

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

985-988

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.985

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Online since:

February 1998

Authors:

Charles Scozzie, J.M. McGarrity

Keywords:

Charge Pumping, Electrical and Thermal Stress Effects, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Silicon Carbide (SiC)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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