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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268MESFETs and MOSFETs on Hydrogen-Terminated Diamond...

MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

977-980

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.977

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Online since:

February 1998

Authors:

K. Tsugawa, A. Hokazono, Hiroshi Noda, K. Kitatani, Koichiro Morita, Hiroshi Kawarada

Keywords:

Hydrogen-Terminated Diamond Surface, MESFET, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Surface Channel, Surface Semiconductive Layer

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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