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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High Voltage Planar 6H-SiC ACCUFET

High Voltage Planar 6H-SiC ACCUFET

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

993-996

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.993

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Cite this paper

Online since:

February 1998

Authors:

P.M. Shenoy, B.J. Baliga

Keywords:

ACCUFET, Accumulation Channel Mobility, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), On-Resistance, Oxide Rupture

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Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

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