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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC

High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1005-1008

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1005

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Online since:

February 1998

Authors:

J. Spitz, M.R. Melloch, James A. Cooper, Michael A. Capano

Keywords:

DMOS, LDMOS, Power MOSFET, RESURF, Semiconductor on Insulator, SOI

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Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

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