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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Dependence of Channel Mobility on the Surface Step...

Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1001-1004

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1001

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Online since:

February 1998

Authors:

Sigo Scharnholz, E. Stein von Kamienski, A. Gölz, C. Leonhard, H. Kurz

Keywords:

Channel-Mobility, Interface Roughness, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Off-Axis Orientation

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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