Paper Titles

Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification
p.973

MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces
p.977

On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium
p.981

Charge Pumping Measurements on SiC MOSFETs
p.985

1400 V 4H-SiC Power MOSFETs
p.989

High Voltage Planar 6H-SiC ACCUFET
p.993

Inversion Layer Mobility in SiC MOSFETs
p.997

Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs
p.1001

High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC
p.1005

HomeMaterials Science ForumMaterials Science Forum Vols. 264-2681400 V 4H-SiC Power MOSFETs

1400 V 4H-SiC Power MOSFETs

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

989-992

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.989

Citation:

Cite this paper

Online since:

February 1998

Authors:

Anant K. Agarwal, Jeff B. Casady, L.B. Rowland, W.F. Valek, C.D. Brandt

Keywords:

High Voltage (HV), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Power Device, UMOS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: