On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

981-984

DOI:

10.4028/www.scientific.net/MSF.264-268.981

Citation:

M. Sadeghi et al., "On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium", Materials Science Forum, Vols. 264-268, pp. 981-984, 1998

Online since:

February 1998

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