Evaluating the Three Common SiC Polytypes for MESFET Applications
p.965
p.965
Effect of Device Temperature on RF FET Power Density
p.969
p.969
Theoretical Investigation of the Electrical Behavior of SiC MESFETs for Microwave Power Amplification
p.973
p.973
MESFETs and MOSFETs on Hydrogen-Terminated Diamond Surfaces
p.977
p.977
On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium
p.981
p.981
Charge Pumping Measurements on SiC MOSFETs
p.985
p.985
1400 V 4H-SiC Power MOSFETs
p.989
p.989
High Voltage Planar 6H-SiC ACCUFET
p.993
p.993
Inversion Layer Mobility in SiC MOSFETs
p.997
p.997
On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures: The Effect of Thermal Non-Equilibrium
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
981-984
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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