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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Effect of Device Temperature on RF FET Power...

Effect of Device Temperature on RF FET Power Density

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Abstract:

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

969-972

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.969

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Online since:

February 1998

Authors:

C. Weitzel, L. Pond, K. Moore, M. Bhatnagar

Keywords:

Field-Effect Transistor, Gallium Arsenide, HFET, High-Power High-Frequency, MESFET, RF Power, Silicon, Simulation Modeling, Thermal Conductivity (TC)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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