Paper Titles

High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization
p.937

Medici Simulation of 6H-SiC Oxide Ramp Profile Schottky Structure
p.941

A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
p.945

Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers
p.949

Silicon Carbide MESFET's for High-Power S-Band Applications
p.953

Temperature Dependent Small- and Large-Signal Performance of 4H-SiC MESFET's
p.957

Voltage Handling Capability and Microwave Performance of a 4H-SiC MESFET - A Simulation Study
p.961

Evaluating the Three Common SiC Polytypes for MESFET Applications
p.965

Effect of Device Temperature on RF FET Power Density
p.969

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Silicon Carbide MESFET's for High-Power S-Band...

Silicon Carbide MESFET's for High-Power S-Band Applications

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

953-956

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.953

Citation:

Cite this paper

Online since:

February 1998

Authors:

S.T. Allen, R.A. Sadler, T.S. Alcorn, Joseph J. Sumakeris, R.C. Glass, Calvin H. Carter Jr., John W. Palmour

Keywords:

High-Frequency, MESFET, Micro-Wave

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: